Ferroelectricity in the Al doped HfO2
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference54 articles.
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3. Yurchuk, E.; Muller, J.; Hoffmann, R.; Paul, J.; Martin, D.; Boschke, R.; Schlosser, T.; Muller, S.; Slesazeck, S.; Bentum, R. v.; Trentzsch, M.; Schroder, U.; Mikolajick, T. In HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention, 2012 4th IEEE International Memory Workshop, 20–23 May 2012; 2012; pp 1–4.
4. A ferroelectric semiconductor field-effect transistor;Si;Nat. Electron.,2019
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