Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3636417
Reference14 articles.
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4. A. Berthelot, C. Caillat, V. Huard, S. Barnola, B. Boeck, H. Del-Puppo, N. Emonet, and F. Lalanne, 2006 European Solid State Device Research Conference, ESSDERC 2006, Montreux, 19–21 September 2006, p. 343.
5. Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition
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