Highly Reliable TiN/ZrO2/TiN 3D Stacked Capacitors for 45 nm Embedded DRAM Technologies-Reference-Cited by-同舟云学术

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Highly Reliable TiN/ZrO2/TiN 3D Stacked Capacitors for 45 nm Embedded DRAM Technologies

Published:2006-09 Issue: Volume: Page:
ISSN:1930-8876
Container-title:2006 European Solid-State Device Research Conference
language:
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Author:

Berthelot A.,Caillat C.,Huard V.,Barnola S.,Boeck B.,Del-Puppo H.,Emonet N.,Lalanne F.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4099836/4099837/04099926.pdf?arnumber=4099926

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research Trends of Atomic Layer Deposition of Metal Nitrides and Their Applications in Semiconductor Industry;Ceramist;2024-03-31

2. Design of n+-base width of two-terminal-electrode vertical thyristor for cross-point memory cell without selector;Nanotechnology;2021-01-13

3. Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films;Journal of Physics D: Applied Physics;2020-10-24

4. Influence of Oxygen Content on the Structure and Reliability of Ferroelectric HfxZr1–xO2 Layers;ACS Applied Electronic Materials;2020-10-23

5. Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics;Advanced Electronic Materials;2017-03-08

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