Influence of Oxygen Content on the Structure and Reliability of Ferroelectric HfxZr1

Influence of Oxygen Content on the Structure and Reliability of Ferroelectric HfxZr1–xO2 Layers

Published:2020-10-23 Issue:11 Volume:2 Page:3618-3626
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Materano Monica¹^ORCID,Mittmann Terence¹,Lomenzo Patrick D.¹^ORCID,Zhou Chuanzhen²,Jones Jacob L.³,Falkowski Max⁴^ORCID,Kersch Alfred⁴^ORCID,Mikolajick Thomas¹⁵,Schroeder Uwe¹^ORCID

Affiliation:

1. Namlab gGmbH, Noethnitzer Strasse 64a, 01187 Dresden, Germany

2. Analytical Instrumentation Facility, North Carolina State University, 27695 Raleigh, North Carolina, United States

3. Department of Materials Science and Engineering, North Carolina State University, 27695 Raleigh, North Carolina, United States

4. Hochschule München, Lothstr. 34, 80335 München, Germany

5. Chair of Nanoelectronic Materials, TU Dresden, Noethnitzer Strasse 64, 01062 Dresden, Germany

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium f?r Wirtschaft und Energie

National Science Foundation

Gauss Centre for Supercomputing e.V.

State of North Carolina

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00680

Reference40 articles.

1. HfO2 gate dielectric with 0.5 nm equivalent oxide thickness

2. Dielectric property and thermal stability of HfO2 on silicon

3. The High-k Solution

4. Berthelot, A.; Caillat, C.; Huard, V.; Barnola, S.; Boeck, B.; Del-Puppo, H.; Emonet, N.; Lalanne, F. Highly Reliable TiN/ZrO2/TiN 3D Stacked Capacitors for 45 Nm Embedded DRAM Technologies. 2006 European Solid-State Device Research Conference; IEEE: Montreux: Switzerland, 2006; pp 343–346.

5. Govoreanu, B.; Kar, G. S. 31.6 10 × 10 nm2 Hf/HfOx Crossbar Resistive RAM with Excellent Performance, Reliability and Low-Energy Operation. International Electron Devices Meeting 2011; IEEE: Washington, DC, USA, 2011.

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