Effect of La and Sc Doping on the Structural, Electronic, and Optical Properties of Cubic HfO2: A DFT-Based Spin-Polarized Calculation
Author:
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s11664-023-10561-0.pdf
Reference55 articles.
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3. M.N.K. Alam, S. Clima, B.J. O’Sullivan, B. Kaczer, G. Pourtois, M. Heyns, and J.V. Houdt, First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO2. J. Appl. Phys. 129, 084102 (2021).
4. L. Zhao, S. Clima, B.M. Kope, M. Jurczak, and Y. Nishi, Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: effects of oxide phases, stoichiometry, and dopant concentrations. Appl. Phys. Lett. 107, 013504 (2015).
5. X. Liu, A. Li, X. Qian, J. Kong, J. Zhou, and D. Wu, First-principles study on electronic structure of Gd-doped HfO2 high k gate dielectrics. Integr. Ferroelectr. 134(1), 3 (2012).
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