Computational investigation of the phase stability and the electronic properties for Gd-doped HfO2
Author:
Funder
NSF
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4878401
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1. A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging
2. Effect of ionic substitutions on the structure and dielectric properties of hafnia: A first principles study
3. First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide
4. Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices
5. Recent progress in ab initio simulations of hafnia-based gate stacks
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