Modulating the resistive switching stability of HfO<sub>2</sub>-based RRAM through Gd doping engineering: DFT+<i>U</i>-Reference-Cited by-同舟云学术

Modulating the resistive switching stability of HfO₂-based RRAM through Gd doping engineering: DFT+U

Published:2023 Issue:33 Volume:25 Page:22388-22400
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Zhang Dong-lan¹,Wang Jiong¹^ORCID,Wu Qing²,Du Yong¹

Affiliation:

1. State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China

2. Information and Network Center, Central South University, Changsha, Hunan, 410083, China

Abstract

Oxide-based resistive random access memory (RRAM) is standing out in both non-volatile memory and the emerging field of neuromorphic computing, with the consequence of increasing performance demands.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP02050A

Reference59 articles.

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2. A compute-in-memory chip based on resistive random-access memory

3. Recent Progress of Organic–Inorganic Hybrid Perovskites in RRAM, Artificial Synapse, and Logic Operation

4. Self-organization of an inhomogeneous memristive hardware for sequence learning

5. Resistive switching materials for information processing

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