Ce-doping at Mn site to enhance resistive switching performance of spinel MnCo2O4 resistive random access memory devices-Reference-Cited by-同舟云学术

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Ce-doping at Mn site to enhance resistive switching performance of spinel MnCo2O4 resistive random access memory devices

Published:2024-06 Issue:11 Volume:50 Page:20495-20503
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Du Ling,Li Jiacheng,Liao Qi,Qin Ni,Bao Dinghua^ORCID

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference43 articles.

1. Resistive switching materials for information processing;Wang;Nat. Rev. Mater.,2020

2. Self-assembled lanthanum oxide nanoflakes by electrodeposition technique for resistive switching memory and artificial synaptic devices;Patil;Small,2023

3. Metal–oxide RRAM;Wong;Proc. IEEE,2012

4. Layered memristive and memcapacitive switches for printable electronics;Bessonov;Nat. Mater.,2015

5. Memristive technologies for data storage, computation, encryption, and radio-frequency communication;Lanza;Science,2022

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Understanding the Reversible Transition of Unipolar and Bipolar Resistive Switching Characteristics in Solution-Derived Nanocrystalline Au–Co₃O₄ Thin-Film Memristors;ACS Omega;2024-07-23

2. Novel MnCo2O4/YVO4 heterostructure for promoting photocatalytic oxidative desulfurization of thiophene under visible light;Ceramics International;2024-07

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