First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO2-Reference-Cited by-同舟云学术

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First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO2

Published:2021-02-28 Issue:8 Volume:129 Page:084102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Alam Md Nur K¹²^ORCID,Clima S.¹^ORCID,O'Sullivan B. J.¹^ORCID,Kaczer B.¹,Pourtois G.¹³,Heyns M.¹²,Van Houdt J.¹⁴

Affiliation:

1. Institute for Microelectronics, IMEC 3001, Leuven, Belgium

2. Department of Materials Engineering, KU Leuven 3001, Leuven, Belgium

3. PLASMANT, University of Antwerp, 2610 Antwerpen, Belgium

4. Department of Physics and Astronomy, KU Leuven, 3001 Leuven, Belgium

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0033957

Reference26 articles.

1. A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

2. Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

3. Review and Perspective of Hf-based High-kGate Dielectrics on Silicon

4. Vacancy and interstitial defects in hafnia

5. Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO 2

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Progress in computational understanding of ferroelectric mechanisms in HfO2;npj Computational Materials;2024-08-23

2. First‐Principles Calculation of Basic Properties of Rhombohedral Hafnium Oxide with Space Group R3;physica status solidi (b);2024-06-08

3. Characterization and Reliability Study of an Al-Doped HfO₂-Based High-Density 2.5-D MIMCAP;IEEE Transactions on Electron Devices;2024-06

4. Study of hafnium defects in silicon dioxide using density functional theory;Materials Science in Semiconductor Processing;2024-05

5. The reliability impact of N doping on the HfO₂ charge-trapping layer: a first-principles study;The European Physical Journal Applied Physics;2024

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