Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium-Reference-Cited by-同舟云学术

Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium

Published:2015-09-28 Issue:13 Volume:107 Page:132101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yamada Michihiro¹^ORCID,Sawano Kentarou²,Uematsu Masashi¹,Itoh Kohei M.¹

Affiliation:

1. School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan

2. Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan

Funder

Cooperative Research Project Program of the RIEO, Tohoku University

Grant-in-Aid for Scientific Reserch by Nano Queen

Japan Society for the Promotion of Science (JSPS)

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4931939

Reference27 articles.

1. Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

2. Fermi-level pinning and charge neutrality level in germanium

3. Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide

4. Ohmic contact formation on n-type Ge

5. A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film

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