Enhancement of room temperature electroluminescence from strained SiGe/Ge(111) multiple quantum wells light emitting diodes-Reference-Cited by-同舟云学术

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Enhancement of room temperature electroluminescence from strained SiGe/Ge(111) multiple quantum wells light emitting diodes

Published:2024-06 Issue: Volume:176 Page:108299
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Kikuoka Shuya,Kanesawa Rena,Yamada Michihiro,Hamaya Kohei,Sawano Kentarou^ORCID

Funder

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Reference27 articles.

1. Tensilestrained, n-type Ge as gain medium for monolithic laser integration on Si;Liu;Opt Express,2007

2. Recent advances in germanium emission [Invited];Boucaud;Photon. Res.,2013

3. Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration;Liu;Semicond. Sci. Technol.,2012

4. Design of ion-implanted MOSFET's with very small physical dimensions;Dennard;IEEE J. Solid State Circ.,1974

5. Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process;Capellini;Opt Express,2014

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructural characterisation and compound formation in rapidly solidified SiGe alloy;Journal of Alloys and Compounds;2024-07

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