Ohmic contact formation on n-type Ge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2831918
Reference10 articles.
1. Fermi-level pinning and charge neutrality level in germanium
2. Studies of Ti- and Ni-germanide Schottky contacts on n-Ge(100) substrates
3. Modulation of NiGe∕Ge Schottky barrier height by sulfur segregation during Ni germanidation
4. Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates
5. Thermal stability and band alignments for Ge3N4 dielectrics on Ge
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