Electrical, structural and photovoltaic properties of acceptor dye modified Au/n-Ge heterostructure-Reference-Cited by-同舟云学术

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Electrical, structural and photovoltaic properties of acceptor dye modified Au/n-Ge heterostructure

Published:2024-08 Issue: Volume:386 Page:115523
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Mallikarjuna D.,Kumar A. Ashok^ORCID,Kaleemulla S.,Reddy V. Rajagopal,Raghavender M.,Janardhanam V.,Choi Chel-Jong

Publisher

Elsevier BV

Reference42 articles.

1. Modulation of Schottky Barrier Height of Metal/TaN/n-Ge Junctions by Varying TaN Thickness

2. The influence of ion-implantation on the effective Schottky barrier height of NiGe/n-Ge contacts

3. Impact of Random Dopant Fluctuation on n-Type Ge Junctionless FinFETs With Metal–Interlayer–Semiconductor Source/Drain Contact Structure

4. Schottky barrier height modulation effect on n-Ge with TaN contact

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photovoltaic and Barrier Properties of Au/n-Ge Schottky Junction Modified by Methylene Blue Organic Dye Interlayer;Journal of Inorganic and Organometallic Polymers and Materials;2024-09-05

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