Schottky barrier height modulation effect on n-Ge with TaN contact-Reference-Cited by-同舟云学术

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Schottky barrier height modulation effect on n-Ge with TaN contact

Published:2019-03 Issue: Volume:91 Page:206-211
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Wang Jianyuan,Huang Wei,Xu Jianfang,Li Jun,Huang Shihao,Li Cheng,Chen Songyan

Funder

Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Fermi-level pinning and charge neutrality level in germanium;Dimoulas;Appl. Phys. Lett.,2006

2. Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface;Nishimura;Appl. Phys. Lett.,2007

3. Ohmic contact formation on n-type Ge by direct deposition of TiN;Iyota;Appl. Phys. Lett.,2011

4. Ohmic contact to n-type Ge with compositional Ti nitride;Wu;Appl. Surf. Sci.,2013

5. Ohmic contact formation of sputtered TaN on n-type Ge with lower specific contact resistivity;Wu;ECS J. Solid State Sci. Technol.,2012

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1. Electrical, structural and photovoltaic properties of acceptor dye modified Au/n-Ge heterostructure;Solid State Communications;2024-08

2. Ultrahigh Sensitive Phototransistor Based on MoSe₂/Ge Mixed-Dimensional Heterojunction for Visible to Short-Wave Infrared Broadband Photodetection;IEEE Transactions on Electron Devices;2023-12

3. High‐Performance N‐MoSe₂/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection;Advanced Optical Materials;2023-11-28

4. Modulation of Schottky barrier at metal/Ge contacts by phosphoric acid coating and excimer laser annealing;Materials Science in Semiconductor Processing;2023-06

5. Modification of Schottky barrier height for NiFe/p-Si contacts by inserting an ultra-thin HfO2 dielectric layer;Materials Letters;2023-02

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