Ultrahigh Sensitive Phototransistor Based on MoSe2/Ge Mixed-Dimensional Heterojunction for Visible to Short-Wave Infrared Broadband Photodetection
Author:
Affiliation:
1. College of Physical Science and Technology, Xiamen University, Xiamen, China
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10328902/10308751.pdf?arnumber=10308751
Reference30 articles.
1. Low-dimensional wide-bandgap semiconductors for UV photodetectors
2. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges
3. Self‐Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs
4. Switch type PANI/ZnO core-shell microwire heterojunction for UV photodetection
5. Ultrabroadband and High-Detectivity Photodetector Based on WS2/Ge Heterojunction through Defect Engineering and Interface Passivation
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. MoS2/GaN Junction Field‐Effect Transistors with Ultralow Subthreshold Swing and High On/Off Ratio via Thickness Engineering for Logic Inverters;Advanced Functional Materials;2024-09-06
2. Two-Dimensional GeS/SnSe2 Tunneling Photodiode with Bidirectional Photoresponse and High Polarization Sensitivity;ACS Applied Materials & Interfaces;2024-06-22
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