Ultrabroadband and High-Detectivity Photodetector Based on WS2/Ge Heterojunction through Defect Engineering and Interface Passivation-Reference-Cited by-同舟云学术

Ultrabroadband and High-Detectivity Photodetector Based on WS2/Ge Heterojunction through Defect Engineering and Interface Passivation

Published:2021-05-24 Issue:6 Volume:15 Page:10119-10129
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Wu Di¹^ORCID,Guo Jiawen¹,Wang Chaoqiang²,Ren Xiaoyan¹,Chen Yongsheng¹,Lin Pei¹,Zeng Longhui³^ORCID,Shi Zhifeng¹^ORCID,Li Xin Jian¹^ORCID,Shan Chong-Xin¹,Jie Jiansheng²⁴^ORCID

Affiliation:

1. School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China

2. Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China

3. Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China

4. Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa 999078, Macau SAR, China

Funder

Natural Science Foundation of Henan Province

Collaborative Innovation Center of Suzhou Nano Science and Technology

National Natural Science Foundation of China

Priority Academic Program Development of Jiangsu Higher Education Institutions

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science