In-Depth Analysis on Self Alignment Effect of the Fermi-Level Using Graphene on Both n- and p-Type Semiconductors-Reference-Cited by-同舟云学术

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In-Depth Analysis on Self Alignment Effect of the Fermi-Level Using Graphene on Both n- and p-Type Semiconductors

Published:2023-11-30 Issue: Volume: Page:
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Song Sungjoo¹,Kim Seung-Hwan²,Han Kyu-Hyun³,Kim Hyung-jun²⁴,Yu Hyun-Yong¹³^ORCID

Affiliation:

1. Department of Semiconductor Systems Engineering, Korea University, Seoul 02841, Korea

2. Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea

3. Department of Electrical Engineering, Korea University, Seoul 02841, Korea

4. Division of Nano & Information Technology, KIST School, Korea University of Science & Technology (UST), Seoul 02792, Republic of Korea

Funder

Ministry of Education

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c14386

Reference44 articles.

1. Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States

2. Contact module progress and challenges in advanced CMOS technologies

3. Ohmic contact formation on n-type Ge

4. Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts

5. Impact of Work Function Optimized S/D Silicide Contact for High Current Drivability CMOS

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ag/SnO2/In2O3 ternary composites for enhanced ammonia detection at low temperature;Vacuum;2024-09

2. p-Type Schottky Contacts for Graphene Adjustable-Barrier Phototransistors;Nanomaterials;2024-07-02

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