Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts-Reference-Cited by-同舟云学术

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Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts

Published:2021-03-30 Issue:5 Volume:7 Page:2001212
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Ngo Tien Dat¹,Yang Zheng¹,Lee Myeongjin¹,Ali Fida¹,Moon Inyong¹,Kim Dong Gyu²,Taniguchi Takashi³,Watanabe Kenji³,Lee Kang‐Yoon¹²,Yoo Won Jong¹^ORCID

Affiliation:

1. SKKU Advanced Institute of Nano‐Technology (SAINT) Sungkyunkwan University 2066, Seobu‐ro, Jangan‐gu Suwon Gyeonggi‐do 16419 Korea

2. Department of Electrical and Computer Engineering Sungkyunkwan University 2066, Seobu‐ro, Jangan‐gu Suwon Gyeonggi‐do 16419 Korea

3. National Institute for Materials Science Tsukuba Ibaraki 305‐0047 Japan

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202001212

Reference34 articles.

1. Boron nitride substrates for high-quality graphene electronics

2. Van der Waals integration before and beyond two-dimensional materials

3. Three fundamental devices in one: a reconfigurable multifunctional device in two-dimensional WSe2

4. Charge Transport in MoS2/WSe2 van der Waals Heterostructure with Tunable Inversion Layer

5. Highly Enhanced Photoresponsivity of a Monolayer WSe2 Photodetector with Nitrogen-Doped Graphene Quantum Dots

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4. Transistor engineering based on 2D materials in the post-silicon era;Nature Reviews Electrical Engineering;2024-04-30

5. Exploring Electrostatic Confinement Transport in MoS₂/WSe₂ Heterostructure via Triple‐Gated Point Contact Device;Advanced Materials Technologies;2024-04-18

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