Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States-Reference-Cited by-同舟云学术

Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States

Author:

Kim Gwang-Sik¹^ORCID,Kim Seung-Hwan¹^ORCID,Park June²,Han Kyu Hyun¹,Kim Jiyoung³^ORCID,Yu Hyun-Yong¹^ORCID

Affiliation:

1. School of Electrical Engineering, Korea University, Seoul 02841, Korea

2. Department of Nano Semiconductor Engineering, Korea University, Seoul 02841, Korea

3. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States

Funder

National Research Foundation of Korea

Semiconductor Design Education Center, Korea Advanced Institute of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

Reference50 articles.

Cited by 150 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献