Plasmonic metagrating-interlayer semiconductor (PMIS) structure for enhancing photodetection via hot-electron injection

Abstract

Internal photoemission or hot-electron injection (HEJ) occurring at the metal-semiconductor (MS) Schottky interface has shown great promise in sub-bandgap photodetection and photovoltaics. In this paper, we put forward a plasmonic metagrating-interlayer-semiconductor (PMIS) structure that can significantly enhance the photon-to-electron conversion efficiency of HEJ-based optoelectronic devices. Thanks to the effect of image force-induced barrier lowering, a metal-interlayer-semiconductor (MIS) heterojunction with an ultrathin 2D material interlayer can considerably facilitate the hot electron transport across the Schottky barrier, resulting in a high internal quantum efficiency (IQE). Meanwhile, nanopatterning the MIS heterojunction into the plasmonic metagrating enables high optical absorption such that the device’s external quantum efficiency (EQE) can be nearly equal to its IQE. In addition, this device can be wavelength- and polarization-selective by tailoring the geometry and dimensions of plasmonic metagrating, thereby paving a promising path toward bandgap-independent photodetection, energy harvesting, and photocatalysis.