Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1805194
Reference11 articles.
1. Preparation of Germanium Nitride Films on the Stained Germanium Crystal Surface
2. Thin germanium nitride films grown by thermal reaction process
3. Plasma‐deposited germanium nitride gate insulators for indium phosphide metal‐insulator‐semiconductor field‐effect transistors
4. Ge3N4-InP MIS structures
5. Interface characteristics of Ge3N4-(n-type) GaAs MIS devices
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