Strong room-temperature EL emission from Ge-on-Si (1 1 1) diodes-Reference-Cited by-同舟云学术

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Strong room-temperature EL emission from Ge-on-Si (1 1 1) diodes

Published:2022-09 Issue: Volume:594 Page:126766
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sugiura Yuwa,Sasaki Masashi,Wagatsuma Youya,Yamada Koudai,Hoshi Yusuke,Yamada Michihiro,Hamaya Kohei,Sawano Kentarou

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference31 articles.

1. Tensile-strained, n-type Ge as gain medium for monolithic laser integration on Si;Liu;Opt. Express,2007

2. Recent advances in germanium emission [Invited];Boucaud;Photonics Res.,2013

3. Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration;Liu;Semicond. Sci. Technol.,2012

4. Design of ion-implanted MOSFET's with very small physical dimensions;Dennard;IEEE J. Solid-State Circuits,1974

5. Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process;Capellini;Opt. Express,2014

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of crack-free strained SiGe/Ge multiple quantum wells on Ge-on-Si(111) by the patterning method;Materials Science in Semiconductor Processing;2024-07

2. Enhancement of room temperature electroluminescence from strained SiGe/Ge(111) multiple quantum wells light emitting diodes;Materials Science in Semiconductor Processing;2024-06

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