Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain-Reference-Cited by-同舟云学术

Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain

Published:2023-11 Issue: Volume:167 Page:107763
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Yamamoto Keisuke^ORCID,Matsuo Takuro,Yamada Michihiro,Wagatsuma Youya,Sawano Kentaro,Hamaya Kohei

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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4. Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio;Tahara;Appl. Phys. Express,2015

5. Investigation of gating effect in Si spin MOSFET;Lee;Appl. Phys. Lett.,2020

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1. Low temperature (210 °C) fabrication of Ge MOS capacitor and controllability of its flatband voltage;Materials Science in Semiconductor Processing;2024-08

2. Low-temperature process design for inversion mode n-channel thin-film-transistor on polycrystalline Ge formed by solid-phase crystallization;Japanese Journal of Applied Physics;2024-01-05