Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio-Reference-Cited by-同舟云学术

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Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio

Published:2015-10-22 Issue:11 Volume:8 Page:113004
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Tahara Takayuki,Koike Hayato,Kameno Makoto,Sasaki Tomoyuki,Ando Yuichiro,Tanaka Kazuhito,Miwa Shinji,Suzuki Yoshishige,Shiraishi Masashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/8/i=11/a=113004/pdf

Reference16 articles.

1. Electronic analog of the electro‐optic modulator

2. Novel Reconfigurable Logic Gates Using Spin Metal–Oxide–Semiconductor Field-Effect Transistors

3. Electrical detection of spin precession in a metallic mesoscopic spin valve

4. Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature

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