Investigation of gating effect in Si spin MOSFET-Reference-Cited by-同舟云学术

Investigation of gating effect in Si spin MOSFET

Published:2020-01-13 Issue:2 Volume:116 Page:022403
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Soobeom¹^ORCID,Rortais Fabien¹^ORCID,Ohshima Ryo¹^ORCID,Ando Yuichiro¹,Goto Minori²^ORCID,Miwa Shinji²^ORCID,Suzuki Yoshishige²,Koike Hayato³,Shiraishi Masashi¹^ORCID

Affiliation:

1. Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan

2. Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

3. Advanced Products Development Center, TDK Corporation, Ichikawa, Chiba 272-8558, Japan

Funder

Japan Society for the Promotion of Science

Ministry of Education, Culture, Sports, Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5131823

Reference29 articles.

1. A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain

2. Novel Reconfigurable Logic Gates Using Spin Metal–Oxide–Semiconductor Field-Effect Transistors

3. Spin Injection and Detection in Silicon

4. Electronic measurement and control of spin transport in silicon

5. Coherent Spin Transport through a 350 Micron Thick Silicon Wafer

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