Magnetoresistance ratio of more than 1% at room temperature in germanium vertical spin-valve devices with Co2FeSi-Reference-Cited by-同舟云学术

Magnetoresistance ratio of more than 1% at room temperature in germanium vertical spin-valve devices with Co2FeSi

Published:2021-11-08 Issue:19 Volume:119 Page:192404
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yamada A.¹,Yamada M.²³^ORCID,Honda M.¹,Yamada S.¹³^ORCID,Sawano K.⁴,Hamaya K.¹³^ORCID

Affiliation:

1. Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan

2. PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

3. Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan

4. Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082, Japan

Funder

Japan Society for the Promotion of Science

Precursory Research for Embryonic Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0061504

Reference54 articles.

1. Spintronics: Fundamentals and applications

2. Spintronic effects in metallic, semiconductor, metal–oxide and metal–semiconductor heterostructures

3. Spin-based logic in semiconductors for reconfigurable large-scale circuits

4. MOS-Based Spin Devices for Reconfigurable Logic

5. Investigation of gating effect in Si spin MOSFET

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