The effect of boron diffusions on the defect density and recombination at the (111) silicon-silicon oxide interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2903698
Reference12 articles.
1. The doped Si/SiO2 interface
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3. Accurate measurement of extremely low surface recombination velocities on charged, oxidized silicon surfaces using a simple metal-oxide-semiconductor structure
4. Defect generation at the Si–SiO2 interface following corona charging
5. Invasive nature of corona charging on thermal Si/SiO2 structures with nanometer-thick oxides revealed by electron spin resonance
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