Effect of boron concentration on recombination at the p-Si–Al2O3 interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4867643
Reference44 articles.
1. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
2. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
3. Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide
4. Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide
5. High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition
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