On effective surface recombination parameters-Reference-Cited by-同舟云学术

On effective surface recombination parameters

Published:2014-07-07 Issue:1 Volume:116 Page:014503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

McIntosh Keith R.,Black Lachlan E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4886595

Reference42 articles.

1. B. Kuhlmann , “ Charakterisierung und mehrdimensionale Simulation von MIS-Inversionsschichtsolarzellen,” Ph.D. Thesis ( University of Hannover, Germany, 1998), p. 71.

2. Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon

3. Interpretation of recombination at c-Si/SiNx interfaces by surface damage

4. Studies of diffused phosphorus emitters: saturation current, surface recombination velocity, and quantum efficiency

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