The doped Si/SiO2 interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Impurity bands in moderately doped semiconductors and their effect on the MOS C-V freeze-out characteristics
2. Determination of generation lifetime from the small-signal transient behavior of MOS capacitors
3. Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures
4. Surface recombination in semiconductors
5. The Influence of Fixed Interface Charges on the Current‐Gain Falloff of Planar n‐p‐n Transistors
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