Effect of Surface Dopant Concentration
Author:
Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-32521-7_7
Reference68 articles.
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4. Aberle, A.G., Glunz, S., Warta, W.: Impact of illumination level and oxide parameters on Shockley-Read-Hall recombination at the Si-SiO $$_2$$ 2 interface. J. Appl. Phys. 71, 4422–4431 (1992)
5. King, R., Sinton, R., Swanson, R.: Studies of diffused phosphorus emitters: saturation current, surface recombination velocity, and quantum efficiency. IEEE Trans. Electron Devices 37, 365–371 (1990)
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