Anisotropic interfacial strain in InP/InGaAs/InP quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368839
Reference25 articles.
1. Anisotropic interfacial strain in InP/InGaAs/InP quantum wells studied using degree of polarization of photoluminescence
2. Optimization and characterization of interfaces of InGaAs/InGaAsP quantum well structures grown by gas‐source molecular beam epitaxy
3. Evidence for intrinsic interfacial strain in lattice-matchedInxGa1−xAs/InP heterostructures
4. Structural and optical characterization of monolayer interfaces in Ga0.47In0.53As/InP multiple quantum wells grown by chemical beam epitaxy
5. Origin of optical anisotropy in strained InxGa1−xAs/InP and InyAl1−yAs/InP heterostructures
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1. Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation;Applied Optics;2020-06-16
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5. Spatially-resolved and polarization-resolved photoluminescence for study of dislocations and strain in III–V materials;Materials Science and Engineering: B;2002-04
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