Comparison of different grading approaches in metamorphic buffers grown on a GaAs substrate-Reference-Cited by-同舟云学术

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Comparison of different grading approaches in metamorphic buffers grown on a GaAs substrate

Published:2014-01 Issue: Volume:386 Page:183-189
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Saha Sudip,Cassidy Daniel T.,Thompson D.A.

Funder

Natural Sciences and Engineering Research Council of Canada

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. Dislocation morphology in graded heterojunctions: GaAs1?xPx

2. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

3. Strain relaxation properties of InAsyP1−y metamorphic materials grown on InP substrates

4. Effects of substrate temperature on the growth of InGaAs compositionally graded buffers and on quantum well structures grown above them

5. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation;Applied Optics;2020-06-16

2. Step-graded InAsP buffer layers with gradient interface grown via metal organic chemical vapor deposition;SN Applied Sciences;2019-05-17

3. Control of threading dislocations by Al(Ga)InAs reverse-graded buffers grown on GaAs substrates;Japanese Journal of Applied Physics;2016-05-19

4. Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities;Applied Surface Science;2015-12

5. Design of nonlinear metamorphic buffer layers for lattice-mismatched InxGa1−xAs/GaAs (001) semiconductor devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09

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