Structural and optical characterization of monolayer interfaces in Ga0.47In0.53As/InP multiple quantum wells grown by chemical beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361134
Reference19 articles.
1. Interface-Roughness Scattering in GaAs/AlxGa1-xAs Superlattices
2. On the effects of Auger recombination and energetic carrier leakage in GaInAsP/InP light emitting diodes
3. InAsP islands at the lower interface of InGaAs/InP quantum wells grown by metalorganic chemical vapor deposition
4. Strain distribution in InP/InGaAs superlattice structure determined by high resolution x‐ray diffraction
5. Growth of abrupt InGaAs(P)/In(GaAs)P heterointerfaces by gas source molecular beam epitaxy
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1. Focused gas beam injection for efficient ammonia-molecular beam epitaxial growth of III-nitride semiconductors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03
2. Effect of Hetero-Interfaces on Rashba Spin-Orbit Coupling in a Gated In0.53Ga0.47As/InP Quantum Well Structure;Advanced Materials Research;2011-12
3. High resolution x-ray diffraction analysis of InGaAs∕InP superlattices;Journal of Applied Physics;2006-08-15
4. The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films;Surface Science Reports;2004-05
5. Cross-sectional scanning tunneling microscopy studies of lattice-matched InGaAs/InP quantum wells: variations in growth switching sequence;Journal of Crystal Growth;2003-03
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