High resolution x-ray diffraction analysis of InGaAs∕InP superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2335689
Reference20 articles.
1. Structural and optical characterization of monolayer interfaces in Ga0.47In0.53As/InP multiple quantum wells grown by chemical beam epitaxy
2. Evidence for intrinsic interfacial strain in lattice-matchedInxGa1−xAs/InP heterostructures
3. Strain distribution in InP/InGaAs superlattice structure determined by high resolution x‐ray diffraction
4. Cross-sectional scanning tunneling microscopy studies of lattice-matched InGaAs/InP quantum wells: variations in growth switching sequence
5. Investigation and optimization of InGaAs/InP heterointerfaces grown by chemical beam epitaxy using spectroscopic ellipsometry and photoluminescence
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1. Interfacial characteristics dependence on interruption times in InGaAs/InAlAs superlattice grown by molecular beam epitaxy;Journal of Alloys and Compounds;2024-11
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3. Growth optimization of quantum-well-enhanced multijunction photovoltaics;Cell Reports Physical Science;2023-06
4. Interface quality in GaSb/AlSb short period superlattices;Journal of Vacuum Science & Technology A;2021-12
5. Band offsets and electronic structures of interface between In0.5Ga0.5As and InP;Journal of Applied Physics;2016-02-07
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