Investigation and optimization of InGaAs/InP heterointerfaces grown by chemical beam epitaxy using spectroscopic ellipsometry and photoluminescence-Reference-Cited by-同舟云学术

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Investigation and optimization of InGaAs/InP heterointerfaces grown by chemical beam epitaxy using spectroscopic ellipsometry and photoluminescence

Published:1992-03 Issue:3 Volume:21 Page:269-275
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Sherwin M. E.,Terry F. L.,Munns G. O.,Herman J. S.,Woelk E. G.,Haddad G. I.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02660453.pdf

Reference16 articles.

1. W. T. Tsang, presented at Intl. MBE VI, San Diego 1990.

2. W. T. Tsang and E. F. Schubert, Appl. Phys. Lett.49, 200 (1986).

3. M. B. Panish, H. Temkin and S. Sumski, J. Vac. Sci. Tech- nol. B3, 657 (1985).

4. M. E. Sherwin, G. O. Munns, M. E. Elta, E. G. Wœlk, S. B. Crary, F. L. Terry and G. I. Haddad, presented at Intl. MBE VI, San Diego 1990.

5. H. Heinecke, B. Baur, R. Höger, A. Miklis and R. Treichler, presented at Intl. MBE VI, San Diego 1990.

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High resolution x-ray diffraction analysis of InGaAs∕InP superlattices;Journal of Applied Physics;2006-08-15

2. Structural and optical characterization of InP/GaxIn1−xAsyP1−yquantum wells and interfacial layers;Journal of Applied Physics;1996-10

3. Issues in epitaxial growth of phosphides and antimonides;Computational Materials Science;1996-08

4. Study on interface abruptness of InxGa1−xAs/InyGa1−yAszP1−z heterostructures grown by gas-source molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-07

5. Heterojunction bipolar transistors with low temperature Be-doped base grown by CBE;Journal of Crystal Growth;1996-07

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