Cross-sectional scanning tunneling microscopy studies of lattice-matched InGaAs/InP quantum wells: variations in growth switching sequence
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Characterization of InP/InGaAs double-heterojunction bipolar transistors with tunnelling barriers and composite collector structures
2. p‐type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm
3. The effect of strain in InP/InGaAs quantum-well infrared photodetectors on the operating wavelength
4. Growth of abrupt InGaAs(P)/In(GaAs)P heterointerfaces by gas source molecular beam epitaxy
5. Structural and optical characterization of monolayer interfaces in Ga0.47In0.53As/InP multiple quantum wells grown by chemical beam epitaxy
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1. Axial InAs(Sb) inserts in selective-area InAsP nanowires on InP for optoelectronics beyond 25 µm;Optical Materials Express;2018-03-29
2. Strong Rashba Spin–Orbit Interaction Intensity in Low-Potential-Barrier Quantum Dots;Japanese Journal of Applied Physics;2013-04-01
3. Enhancement of Rashba coupling in vertical In0.05Ga0.95As/GaAs quantum dots;Physical Review B;2011-08-29
4. Atomic diffusion and electronic structure in Al[sub 0.52]In[sub 0.48]P∕GaAs heterostructures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007
5. High resolution x-ray diffraction analysis of InGaAs∕InP superlattices;Journal of Applied Physics;2006-08-15
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