The effect of strain in InP/InGaAs quantum-well infrared photodetectors on the operating wavelength
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1408908
Reference10 articles.
1. Quantum‐well infrared photodetectors
2. High‐detectivityD*=1.0×1010cm √H̄z̄/W GaAs/AlGaAs multiquantum well λ=8.3 μm infrared detector
3. Intersubband absorption in a modulation‐doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum well structure
4. 10 μm infrared hot‐electron transistors
5. Photovoltaic quantum well infrared detector
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1. Diffraction-Grating-Free Very Small-Pitch High-x InP/InxGa1-x as Quantum Well Infrared Photodetectors;IEEE Electron Device Letters;2022-08
2. Strained InxGa(1−x)As/InP near surface quantum wells and MOSFETs;Applied Physics Letters;2022-02-28
3. Investigation of detection wavelength of Quantum Well Infrared-Photodetector;Applied Science and Convergence Technology;2015-11-30
4. Enhanced performance QWIP FPAs;Infrared Physics & Technology;2013-07
5. Diffraction-Grating-Coupled High Quantum Efficiency InP/InGaAs Quantum Well Infrared Photodetector Focal Plane Array;IEEE Journal of Quantum Electronics;2013-02
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