p‐type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm-Reference-Cited by-同舟云学术

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p‐type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm

Published:1996-11-18 Issue:21 Volume:69 Page:3209-3211
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sengupta D. K.,Jackson S. L.,Ahmari D.,Kuo H. C.,Malin J. I.,Thomas S.,Feng M.,Stillman G. E.,Chang Y. C.,Li L.,Liu H. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.117963

Reference12 articles.

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors;Journal of Applied Physics;2016-03-14

2. Observation of room temperature optical absorption in InP/GaAs type-II ultrathin quantum wells and quantum dots;Journal of Applied Physics;2014-06-14

3. Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films;Journal of Physics: Condensed Matter;2012-10-04

4. Design of resonant-cavity-enhanced multi-band photodetectors;Journal of Applied Physics;2011-08-15

5. Conduction band offset and quantum states probed by capacitance–voltage measurements for InP/GaAs type-II ultrathin quantum wells;Journal of Applied Physics;2011-04

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