Interface-Roughness Scattering in GaAs/AlxGa1-xAs Superlattices-Reference-Cited by-同舟云学术

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Interface-Roughness Scattering in GaAs/AlxGa1-xAs Superlattices

Published:1989-10-20 Issue:Part 1, No. 10 Volume:28 Page:1934-1938
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wataya Mitsuo,Sawaki Nobuhiko,Goto Hideo,Akasaki Isamu,Kano Hiroyuki,Hashimoto Masafumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advancing carrier transport models for InAs/GaSb type-II superlattice mid-wavelength infrared photodetectors;Physical Review B;2023-06-21

2. Application of localization landscape theory and the k · p model for direct modeling of carrier transport in a type II superlattice InAs/InAsSb photoconductor system;Journal of Applied Physics;2020-01-21

3. Effects of ionized impurity and interface roughness scatterings on the electron mobility in InAs/GaSb type II superlattices at low temperatures;Modern Physics Letters B;2016-11-30

4. Vertical Transport in InAs/GaSb Superlattice at Low Temperatures;Journal of Low Temperature Physics;2015-10-19

5. Response to “Comment on ‘A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs-GaSb type-II superlattices’” [J. Appl. Phys. 115, 146101 (2014)];Journal of Applied Physics;2014-04-14

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