Effects of ionized impurity and interface roughness scatterings on the electron mobility in InAs/GaSb type II superlattices at low temperatures
Author:
Affiliation:
1. Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 51665-163, Iran
2. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, WA 6009, Australia
Abstract
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics
Link
https://www.worldscientific.com/doi/pdf/10.1142/S021798491650384X
Reference32 articles.
1. Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications
2. Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes
3. Growth and characterization of high current density, high‐speed InAs/AlSb resonant tunneling diodes
4. InAs/AlSb/GaSb resonant interband tunneling diodes and Au-on-InAs/AlSb-superlattice Schottky diodes for logic circuits
5. Mass enhancement and electron–hole coupling in InAs/GaSb bilayers studied by cyclotron resonance
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1. Advancing carrier transport models for InAs/GaSb type-II superlattice mid-wavelength infrared photodetectors;Physical Review B;2023-06-21
2. Study of bulk carrier properties in largely hybridized InAsSb/GaSb superlattice materials;Journal of Applied Physics;2023-01-10
3. Theoretical analysis on the energy band properties of N- and M-structure type-II superlattices;Superlattices and Microstructures;2020-09
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