Growth and characterization of high current density, high‐speed InAs/AlSb resonant tunneling diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104659
Reference13 articles.
1. Resonant tunneling in semiconductor double barriers
2. Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes
3. Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak‐to‐valley current ratios of 30 at room temperature
4. Resonant tunneling in AlSb/InAs/AlSb double‐barrier heterostructures
5. InAs/AlSb double-barrier structure with large peak-to-valley current ratio: a candidate for high-frequency microwave devices
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