InAs/AlSb/GaSb resonant interband tunneling diodes and Au-on-InAs/AlSb-superlattice Schottky diodes for logic circuits-Reference-Cited by-同舟云学术

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InAs/AlSb/GaSb resonant interband tunneling diodes and Au-on-InAs/AlSb-superlattice Schottky diodes for logic circuits

Published:1996-02 Issue:2 Volume:17 Page:69-71
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chow D.H.,Dunlap H.L.,Williamson W.,Enquist S.,Gilbert B.K.,Subramaniam S.,Lei P.-M.,Bernstein G.H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/10335/00484126.pdf?arnumber=484126

Cited by 52 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical study of electronic properties of resonant tunneling diodes based on double and triple AlGaAs barriers;Results in Physics;2020-06

2. Characterization of polycrystalline In(y)Al(x)Sb(1-x-y) films deposited by magnetron sputtering;Thin Solid Films;2019-12

3. Investigation of carrier localization in InAs/AlSb type-II superlattice material system;Applied Physics Letters;2019-11-18

4. Electromodulation of the Negative Differential Resistance in an AlGaAs/GaAs Resonant Tunneling Diode;Journal of the Korean Physical Society;2019-01

5. Band Structure, Charge Distribution and Optical Properties of AlPxSb1-x Ternary Semiconductor Alloys;Materials Research;2018-05-21

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