Spatially-resolved and polarization-resolved photoluminescence for study of dislocations and strain in III–V materials
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference17 articles.
1. Effects of stress on threshold, wavelength, and polarization of the output of InGaAsP semiconductor diode lasers
2. Polarization of the output of InGaAsP semiconductor diode lasers
3. Scattering, absorption, and anomalous spectral tuning of 1.3 μm semiconductor diode lasers
4. Bonding stress measurements from the degree of polarization of facet emission of AlGaAs superluminescent diodes
5. Imaging of stresses in GaAs diode lasers using polarization-resolved photoluminescence
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1. Degree of polarization of luminescence from InP under SiN stripes: fits to FEM simulations;Optics Continuum;2023-06-15
2. Multi-Component Model for Semiconductor Laser Degradation;Advanced Laser Diode Reliability;2021
3. Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation;Applied Optics;2020-06-16
4. Polarized cathodoluminescence for strain measurement;Review of Scientific Instruments;2019-04
5. Comparison of different grading approaches in metamorphic buffers grown on a GaAs substrate;Journal of Crystal Growth;2014-01
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