Investigation of cross-hatch in In0.3Ga0.7As pseudo-substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4796104
Reference24 articles.
1. MBE growth of metamorphic In(Ga)AlAs buffers
2. Growth morphology evolution and dislocation introduction in the heteroepitaxial system
3. Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups
4. Evolution process of cross-hatch patterns and reduction of surface roughness in (InAs)m(GaAs)n strained short-period superlattices and InGaAs alloy layers grown on GaAs
5. Comparison of mixed anion, InAsyP1−y and mixed cation, InxAl1−xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates
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