Evolution process of cross-hatch patterns and reduction of surface roughness in (InAs)m(GaAs)n strained short-period superlattices and InGaAs alloy layers grown on GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370891
Reference20 articles.
1. Optoelectronic Devices and Material Technologies for Photo-Electronic Integrated Systems
2. Reduction of threading dislocation density in InP‐on‐Si heteroepitaxy with strained short‐period superlattices
3. Suppression of threading dislocation generation in GaAs-on-Si with strained short-period superlattices
4. Crosshatched surface morphology in strained III‐V semiconductor films
5. Surface morphology and quality of strained InGaAs grown by molecular-beam epitaxy on GaAs
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