Tensile strained GeSn on Si by solid phase epitaxy-Reference-Cited by-同舟云学术

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Tensile strained GeSn on Si by solid phase epitaxy

Published:2013-02-04 Issue:5 Volume:102 Page:052106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lieten R. R.,Seo J. W.,Decoster S.,Vantomme A.,Peters S.,Bustillo K. C.,Haller E. E.,Menghini M.,Locquet J.-P.

Funder

U.S. Department of Energy

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4790302

Reference30 articles.

1. TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

2. Possibility of increased mobility in Ge-Sn alloy system

3. Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer

4. Sn-alloying as a means of increasing the optical absorption of Ge at theC- andL-telecommunication bands

5. Measurement of the direct energy gap of coherently strained SnxGe1−x/Ge(001) heterostructures

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1. Structural changes in Ge1−xSnx and Si1−x−yGeySnx thin films on SOI substrates treated by pulse laser annealing;Journal of Applied Physics;2024-08-05

2. Tensile-strained Ge_1−xSn_x layers on Si(001) substrate by solid-phase epitaxy featuring seed layer introduction;Japanese Journal of Applied Physics;2024-04-01

3. Epitaxial growth of Ge1-xSnx on c – Plane sapphire substrate by molecular beam epitaxy;Journal of Crystal Growth;2023-09

4. Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers;Journal of Vacuum Science & Technology B;2023-09-01

5. Growth of Epitaxial Layers of the Si<sub>1-x-y</sub>Ge<sub>x</sub>Sn<sub>y</sub> Solid Solution from a Tin Solution-Melt;SIBERIAN JOURNAL OF PHYSICS;2023-08-29

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