Growth of Epitaxial Layers of the Si1-x-yGexSny Solid Solution from a Tin Solution-Melt-Reference-Cited by-同舟云学术

Growth of Epitaxial Layers of the Si1-x-yGexSny Solid Solution from a Tin Solution-Melt

Published:2023-08-29 Issue:1 Volume:18 Page:53-60
ISSN:2541-9447
Container-title:SIBERIAN JOURNAL OF PHYSICS
language:
Short-container-title:jour

Author:

Razzokov A. Sh.¹^ORCID

Affiliation:

1. Urgench State University

Abstract

Mono-crystal films of a graded-gap solid solution Si1-x-yGexSny on Si <111>substrates were grown by liquid-phase epitaxy from a limited tin solution-melt in the temperature range 500–1100 °C. The chemical composition of the grown epitaxial films was determined using a scanning electron microscope.

Publisher

Novosibirsk State University (NSU)

Subject

Automotive Engineering

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