Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn-Reference-Cited by-同舟云学术

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Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn

Published:2013-12 Issue: Volume:384 Page:71-76
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Oehme M.,Buca D.,Kostecki K.,Wirths S.,Holländer B.,Kasper E.,Schulze J.

Funder

Deutsche Forschungsgemeinschaft

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference43 articles.

1. High bandwidth Ge p-i-n photodetector integrated on Si

2. Fast time response from Si–SiGe undulating layer superlattices

3. Metal–germanium–metal ultrafast infrared detectors

4. Measurement of effective electron mass in biaxial tensile strained silicon on insulator

5. Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

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1. Remote plasma-enhanced chemical vapor deposition of GeSn on Si (100), Si (111), sapphire, and fused silica substrates;Journal of Vacuum Science & Technology B;2024-08-20

2. Ge1−Sn layers with x∼0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping;Materials Science in Semiconductor Processing;2024-06

3. The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire;Crystals;2024-04-28

4. Epitaxial twin coupled microstructure in GeSn films prepared by remote plasma enhanced chemical vapor deposition;Journal of Applied Physics;2024-04-25

5. Growth of Epitaxial Layers of the Si<sub>1-x-y</sub>Ge<sub>x</sub>Sn<sub>y</sub> Solid Solution from a Tin Solution-Melt;SIBERIAN JOURNAL OF PHYSICS;2023-08-29

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