Ge1−Sn layers with x∼0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping
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Published:2024-06
Issue:
Volume:176
Page:108302
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ISSN:1369-8001
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Container-title:Materials Science in Semiconductor Processing
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language:en
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Short-container-title:Materials Science in Semiconductor Processing
Author:
Shibayama ShigehisaORCID,
Takagi Komei,
Sakashita Mitsuo,
Kurosawa Masashi,
Nakatsuka Osamu